FDC3535 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technol.

Application

* Load Switch
* Synchronous Rectifier S D D Pin 1 D D SuperSOTTM -6 G S4 D5 D6 3G 2D 1D MOSFET Maximum R.

Description

* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surfa.

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